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ATLANT 3D

Advanced packaging & semiconductor

Advanced packaging & semiconductor

From Silicon to System: A New Approach 

As semiconductor architectures evolve and packaging demands intensify, traditional fabrication methods face increasing constraints.

Direct material processing at the atomic level enables both sophisticated IC development and advanced system integration.

Beyond the Boundaries
of Traditional Processing

Advance Semiconductor
Development 

  • Design precision dielectric interfaces
  • Pattern materials for novel device structures
  • Control doping and material properties
  • Develop specialized barrier layers

Master System
Integration 

  • Create uniform coatings in high-aspect structures up to 60µm
  • Implement multi-material architectures
  • Pattern directly on complex topographies
  • Enable heterogeneous integration

Process Control 

  • Layer precision: 0.3 nm steps
  • Current patterning: 400 µm (25 µm in development)
  • Temperature range: RT to 300°C
  • Process speed: 0.1-100 mm/s

Material Systems 

  • Advanced Dielectrics:

Al₂O₃, HfO₂, TiO₂

  • System Conductors:

Pt, Ir, IrO₂ 

  • Active Components:

ZnO, SnO₂, Ga₂O₃ 

  • Specialized Materials:

Nb₂O₃ for energy storage 

Platform Compatibility

  • Silicon
  • SiC
  • GaN wafers
  • Integration substrates:

Glass, Fused silica, Polymers 

Research Outcomes 

System Capabilities 

– Precise additive and subtractive processing
– Selective area deposition
– Multi-material sequential integration
– High-quality crystalline growth
– Custom gradient structures

Validated Applications

– Next-generation dielectric barriers
– Power electronic components
– Complex heterogeneous devices
– Advanced interconnect architectures
– Novel semiconductor structures 

Explore Technical Possibilities

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Contact Us
Nik Thorsen

Nik Thorsen

Business Development Manager