Change the rules for semiconductor device designers with DALP®
Unleashing Innovation in Semiconductor Technology
DALP® (Direct Atomic Layer Processing) is transforming the semiconductor industry by dramatically accelerating the transition from ideas to prototypes. This innovative technology enables the creation of complex shapes and material applications previously considered unattainable, by allowing for rapid testing and material exploration.
NANOFABRICATOR® Process and Sample Reproducibility Data
Reproducibility and process stability are decisive factors in determining whether a thin-film deposition technology can transition from laboratory use to industrial manufacturing. In high-value applications such as microelectronics, MEMS, and photonics, even small variations in film thickness or uniformity can translate into yield loss, performance drift, or long-term reliability concerns. As a result, manufacturers require deposition processes that deliver consistent results during extended tool operation and across large numbers of patterned features.
AZO (AI-doped ZnO) Thin Films Fabricated by DALP®: A Combinatorial approach
The ability to precisely engineer complex materials with tailored functional properties is a critical enabler for next-generation electronic, optical, and energy devices. Al-doped zinc oxide (AZO) is a representative transparent conductive oxide that combines high optical transparency with tunable electrical conductivity, making it attractive for applications ranging from transparent electronics and photovoltaics to sensors and optoelectronic systems. However, conventional thin-film deposition techniques face significant limitations in achieving atomic-scale control over composition, uniformity, and microstructure, particularly for ternary and doped oxide systems
Self-aligned patterning by area-selective etching of polymers and area-selective atomic layer deposition: Decreasing polymer flow and activating noncatalytic surface
Future semiconductor device architectures necessitate innovative patterning processes. Area-selective etching (ASE) of polymers is a self- aligned patterning technique with significant potential for the future semiconductor fabrication. In the ASE process, etchant gas penetrates the polymer film and becomes activated by the underlying catalytic material. Consequently, at the correct temperature, the polymer layer is selectively decomposed above the catalytically active areas, while it remains unaltered above catalytically inactive areas. This area- selective process ensures self-alignment, thus preventing edge placement errors.
Optical color structuring via DALP-fabricated thin-film interference cavities in ZnO/SiO2 on Si
We present a method for generating structural colors using direct atomic layer processing (DALP) to fabricate thin-film interference cavities made of ZnO and SiO2 on silicon. By locally depositing successive layers and thus varying ZnO thickness from a few nanometers up to 150 nm, we achieve tunable reflective colors via depth modulation
Growth dynamics in patterned TiO2 deposited by direct atomic layer processing (DALP) in ambient conditions
Area-selective atomic layer deposition (AS-ALD) is a nanofabrication method delivering atomic layers of patterned films with exceptional precision, but it still relies on vacuum hardware and surface chemistry pretreatments that limit flexibility and throughput.
Standard deposition techniques typically coat entire substrates, requiring additional etch steps to remove unwanted material. ATLANT 3D’s proprietary Direct Atomic Layer Processing (DALP®) offers a transformative alternative. By employing a microreactor to directly deposit thin films atom by atom, DALP® enables maskless, localized coating precisely where needed
Electrochemical glucose sensors measure glucose levels in biological fluids by converting the biochemical reaction of glucose oxidation into an electrical signal. They are vital in diabetes management, allowing patients to monitor blood glucose conveniently.
Revolutionize your microfabrication processes with ATLANT 3D’s “Chip Surgery” using our pioneering DALP® technology. Discover how we are transforming microfabrication by enabling precise, rapid repairs during the deposition process, drastically reducing downtime and resource waste.
ATLANT 3D’s latest innovation allows for platinum deposition without a reactant, offering greater flexibility and efficiency in thin film deposition processes. Our technology enhances flexibility, reduces material costs, and speeds up the deposition process, making it a valuable tool for research and development in advanced materials.
Direct-Patterning SnO2 Deposition by Atomic-Layer Additive Manufacturing
This study demonstrates the direct-patterning of SnO₂ thin films using atomic-layer additive manufacturing (ALAM), which integrates ALD-like surface chemistry with spatially controlled precursor delivery via a micro-nozzle for 3D-printed line deposition. The process yields uniform, amorphous SnO₂ lines that crystallize upon annealing, with optimal deposition at 200 °C, highlighting ALAM’s potential for eco-efficient microfabrication without lithography.
Direct-Patterning ZnO Deposition by Atomic-Layer Additive Manufacturing Using a Safe and Economical Precursor
Area-selective atomic layer deposition (AS-ALD) is a bottom-up nanofabrication method delivering single atoms from a molecular precursor. AS-ALD enables self-aligned fabrication and outperforms lithography in terms of cost, resistance, and equipment prerequisites, but it requires pre-patterned substrates and is limited by insufficient selectivity and finite choice of substrates.
Additive manufacturing in atomic layer processing mode
The invention of atomic-layer additive manufacturing (ALAM): In ALAM, controlled surface chemistry is performed with spatially constrained flows of molecular precursors delivered to the substrate from a microfluidic nozzle. Each pass of the nozzle over any point of the substrate deposits one monolayer of solid. Repeated passes allow for direct patterning deposition of functional materials with Angström vertical resolution.
