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NANOFABRICATOR™ LITE

Discover the most versatile & powerful tool ever created to accelerate advanced material innovation, rapid process testing & device development with atomic precision.​​ Experience the unprecedented flexibility & material versatility!

Up to 2 Materials simultaneously

Down to 100 µm Line Width

Sample size up to 100 mm

Deposition speed up to 200 mm/s

μDALP™. ATLANT 3D’s Microreactor Direct Atomic Layer Processing technology offers maskless process flexibility and unparalleled prototyping speed – reducing the time of design iterations, resource dependencies and overall cost of innovation.

Multi-material. Enabling multi-material deposition in one process, tested on a wide range of advanced materials, independent of surface roughness and substrate sensitivity with multi-shape deposition and a high degree of thickness control.

NANOFABRICATOR™ LITE. Suitable for a wide range of applications such as MEMS and sensors, optics, photonics, advanced packaging, microelectronics as well as emerging applications. Designed as a compact and versatile tool to seamlessly integrate into your lab infrastructure.

DALP™ Technology

REDEFINING MICROFABRICATION

We enable on-demand next-generation microdevices printing on simple and complex surfaces atom-by-atom. The NANOFABRICATOR™ LITE is the most compact tool ever created to accelerate materials, processes and device innovation with atomic precision.

It is suitable for a wide range of applications such as MEMS, devices, optics, photonics, packaging, RF & electronics and quantum devices which can be developed with ATLANT 3D technology with previously impossible functionality and speed at a fraction of a cost.

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PARADIGM SHIFTING PROCESS

ATLANT 3D’s proprietary DALP™ – DIRECT ATOMIC LAYER PROCESSING technology is enabling a paradigm shift across the whole value chain from advanced material innovation to advanced manufacturing of industrial solutions.

 CURRENT PROCESS

PHOTOLITHOGRAPHY-BASED PROCESS

The existing standard in the fabrication industry, photolithography-based processes, demand extensive infrastructural support and time. Typically, a minimum of 10 processing loops involving around 40 distinct machines are required, necessitating a large-scale operational setup.

The entire process cycle usually extends over a period of at least one month. Furthermore, this method is not without its drawbacks: it poses significant environmental hazards, incurs high capital expenditures (CAPEX) and operational expenses (OPEX), and is characterized by lengthy innovation cycles. This traditional approach, while established, faces challenges in terms of efficiency, sustainability, and agility in response to evolving technological needs.

 ATLANT 3D’S PROCESS

DIRECT ATOMIC LAYER PROCESSING

ATLANT3D’s DALP™, or Direct Atomic Layer Processing, streamlines microfabrication by combining multiple processes into one compact machine, reducing processing time to just 1-2 days.

Key advantages include:

  • Enhanced Process Flexibility: Tailors to diverse applications.
  • Significant Cost Reduction: Lowers capital and operational expenses.
  • Wide Material Compatibility: Supports various ALD process materials.
  • Accelerated R&D and Prototyping: Speeds up development from concept to prototype.
  • Innovative Device Structure Development: Enables new device architectures.
  • Efficient Single-Wafer Processing: Omits traditional lithography
  • enhancing precision and efficiency.
 HOW WE DO IT

SIMPLIFYING THE WHOLE PROCESS

The whole process from experiment design to obtaining samples can take hours with several various DOE parameters. The processed sample has completed DOE with multiple parameter variations including thicknesses, temperatures, and materials.

01

PREPARING DIGITAL PATTERN FILE

This step involves creating a detailed digital blueprint of the desired pattern. It requires precise design work to ensure that the specifications of the pattern are accurately represented and ready for processing.

02

DEFINING DOE PROCESS FLOW AND FILES

In this phase, a systematic approach is taken to plan the experiment. It includes defining the process parameters and conditions, setting up the necessary files, and ensuring that all variables are considered for a successful outcome.

03

UPLOADING BLANK SUBSTRATE

Here, a blank substrate is loaded into the NANOFABRICATOR™ LITE. This substrate serves as the base material on which the processing will be carried out, according to the predefined digital pattern and DOE parameters.

04

DIRECT ATOMIC LAYER PROCESSING

This step signifies the completion of the processing phase. The substrate, now imprinted with the desired pattern through the Nanofabricator’s precise atomic layer processing, is ready for inspection and further use.

05

PROCESSED SAMPLE COMPLETED

This final stage involves the core technology of the NANOFABRICATOR™ LITE. It precisely adds or removes material at an atomic scale, following the digital pattern and DOE guidelines, to create the final micro- or nano-structured sample.

Expanding Horizons

Diverse Advanced Applications

The NANOFABRICATOR™ LITE enables advanced material innovation, rapid process testing, and device development across multiple advanced applications. It exemplifies a paradigm shift across diverse industrial landscapes. Explore how our cutting-edge equipment is advancing industries by offering precision, efficiency, and versatility in nanofabrication.

DISCOVER APPLICATIONS

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DALP™ Technology

Rapid, flexible & versatile atomically precise processing

Our patent pending rapid and direct atomic layer processing technology DALP™ offers rapid material and process development and testing, maskless process flexibility, and unparalleled prototyping speed, reducing the time of design iterations, resource allocation and cost of innovation. ​

​NANOFABRICATOR™ LITE enables multi-material deposition in one process, tested on a wide range of advanced materials, independent of surface roughness and substrate sensitivity with multi-shape deposition and a high degree of thickness control. ​

Our Technology
⸺ Our Solutions

Line Width

400 µm now, 25 µm in development, 1 µm long term goal